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NXH300B100H4Q2F2PG Tech Specifications

Category Transistors - IGBTs - Modules
Manufacturer ON Semiconductor
Mounting Type Chassis Mount
Package / Case Module
Supplier Device Package 27-PIM (71x37.4)
Mfr onsemi
Package Tray
Product Status Active
Current-Collector (Ic) (Max) 73 A
Maximum Gate Emitter Voltage ±20V
Package Type 93x47 (PRESSFIT) (Pb-Free and Halide-Free Press Fit Pins), Q2BOOST - PIM53
Maximum Collector Emitter Voltage 1000 V
Pd - Power Dissipation 194 W
Maximum Operating Temperature + 150 C
Minimum Operating Temperature - 40 C
Factory Pack QuantityFactory Pack Quantity 12
Manufacturer onsemi
Brand onsemi
RoHS Details
Collector- Emitter Voltage VCEO Max 1000 V
Series -
Operating Temperature -40°C ~ 175°C (TJ)
Packaging Tray
Subcategory IGBTs
Configuration Dual, Common Source
Power Dissipation 194W
Power - Max 194 W
Input Standard
Product Type IGBT Modules
Current - Collector Cutoff (Max) 800 μA
Voltage - Collector Emitter Breakdown (Max) 1118 V
Vce(on) (Max) @ Vge, Ic 2.25V @ 15V, 100A
Continuous Collector Current 73A
IGBT Type Trench Field Stop
NTC Thermistor Yes
Input Capacitance (Cies) @ Vce 6.323 nF @ 20 V
Product IGBT Silicon Carbide Modules
Product Category IGBT Modules
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NXH300B100H4Q2F2PG Documents

Download datasheets and manufacturer documentation for   NXH300B100H4Q2F2PG

  • Datasheets
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