- All Products
- /
- Discrete Semiconductor Products
- /
- Transistors - IGBTs - Modules
- /
- NXH450B100H4Q2F2SG
IN STOCK
: 51
Min. : 1
Mult. : 1

Not available to buy on line? Want the lower wholesale price? Please sendRFQ, we will respond immediately
NXH450B100H4Q2F2SG Tech Specifications
| Category | Transistors - IGBTs - Modules | |
| Manufacturer | ON Semiconductor | |
| Mounting Type | Chassis Mount | |
| Package / Case | Module | |
| Supplier Device Package | 56-PIM (93x47) | |
| Mfr | onsemi | |
| Package | Tray | |
| Product Status | Active | |
| Current-Collector (Ic) (Max) | 101 A | |
| Maximum Gate Emitter Voltage | ±20V | |
| Package Type | Q2BOOST - Case 180BR (Pb-Free and Halide-Free Solder Pins) | |
| Maximum Collector Emitter Voltage | 1000 V | |
| Collector-Emitter Saturation Voltage | 1.7V | |
| Pd - Power Dissipation | 234 W | |
| Maximum Operating Temperature | + 150 C | |
| Minimum Operating Temperature | - 40 C | |
| Factory Pack QuantityFactory Pack Quantity | 12 | |
| Continuous Collector Current at 25 C | 101 A | |
| Manufacturer | onsemi |
| Brand | onsemi | |
| Collector- Emitter Voltage VCEO Max | 1000 V | |
| Series | - | |
| Operating Temperature | -40°C ~ 150°C (TJ) | |
| Subcategory | IGBTs | |
| Configuration | 2 Independent | |
| Power Dissipation | 234W | |
| Power - Max | 234 W | |
| Input | Standard | |
| Product Type | IGBT Modules | |
| Current - Collector Cutoff (Max) | 600 μA | |
| Voltage - Collector Emitter Breakdown (Max) | 1000 V | |
| Vce(on) (Max) @ Vge, Ic | 2.25V @ 15V, 150A | |
| Continuous Collector Current | 101A | |
| IGBT Type | - | |
| NTC Thermistor | Yes | |
| Input Capacitance (Cies) @ Vce | 9.342 nF @ 20 V | |
| Product | IGBT Silicon Carbide Modules | |
| Product Category | IGBT Modules |
Select at least one checkbox above to show similar products in this category.
NXH450B100H4Q2F2SG Documents
Download datasheets and manufacturer documentation for NXH450B100H4Q2F2SG
Index :
0123456789ABCDEFGHIJKLMNOPQRSTUVWXYZ
