NXH450B100H4Q2F2SG Tech Specifications

Category Transistors - IGBTs - Modules
Manufacturer ON Semiconductor
Mounting Type Chassis Mount
Package / Case Module
Supplier Device Package 56-PIM (93x47)
Mfr onsemi
Package Tray
Product Status Active
Current-Collector (Ic) (Max) 101 A
Maximum Gate Emitter Voltage ±20V
Package Type Q2BOOST - Case 180BR (Pb-Free and Halide-Free Solder Pins)
Maximum Collector Emitter Voltage 1000 V
Collector-Emitter Saturation Voltage 1.7V
Pd - Power Dissipation 234 W
Maximum Operating Temperature + 150 C
Minimum Operating Temperature - 40 C
Factory Pack QuantityFactory Pack Quantity 12
Continuous Collector Current at 25 C 101 A
Manufacturer onsemi
Brand onsemi
Collector- Emitter Voltage VCEO Max 1000 V
Series -
Operating Temperature -40°C ~ 150°C (TJ)
Subcategory IGBTs
Configuration 2 Independent
Power Dissipation 234W
Power - Max 234 W
Input Standard
Product Type IGBT Modules
Current - Collector Cutoff (Max) 600 μA
Voltage - Collector Emitter Breakdown (Max) 1000 V
Vce(on) (Max) @ Vge, Ic 2.25V @ 15V, 150A
Continuous Collector Current 101A
IGBT Type -
NTC Thermistor Yes
Input Capacitance (Cies) @ Vce 9.342 nF @ 20 V
Product IGBT Silicon Carbide Modules
Product Category IGBT Modules
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NXH450B100H4Q2F2SG Documents

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