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1N5817G Tech Specifications
| Category | Diodes - Rectifiers - Single | |
| Manufacturer | ON Semiconductor | |
| Lifecycle Status | ACTIVE (Last Updated: 4 days ago) | |
| Factory Lead Time | 5 Weeks | |
| Mounting Type | Through Hole | |
| Package / Case | DO-204AL, DO-41, Axial | |
| Number of Pins | 2Pins | |
| Supplier Device Package | Axial | |
| Weight | 4.535924g | |
| Breakdown Voltage / V | 20V | |
| Packaging | Bulk | |
| Published | 1998 | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Max Operating Temperature | 125°C | |
| Min Operating Temperature | -65°C | |
| Voltage - Rated DC | 20V | |
| Current Rating | 1A | |
| Base Part Number | 1N5817 | |
| Polarity | Standard | |
| Element Configuration | Single | |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | |
| Diode Type | Schottky |
| Current - Reverse Leakage @ Vr | 1mA @ 20V | |
| Output Current | 1A | |
| Voltage - Forward (Vf) (Max) @ If | 450mV @ 1A | |
| Forward Current | 1A | |
| Operating Temperature - Junction | -65°C~125°C | |
| Halogen Free | Halogen Free | |
| Voltage - DC Reverse (Vr) (Max) | 20V | |
| Current - Average Rectified (Io) | 1A | |
| Forward Voltage | 450mV | |
| Max Reverse Voltage (DC) | 20V | |
| Average Rectified Current | 1A | |
| Peak Reverse Current | 1mA | |
| Max Repetitive Reverse Voltage (Vrrm) | 20V | |
| Peak Non-Repetitive Surge Current | 25A | |
| Max Forward Surge Current (Ifsm) | 25A | |
| Diameter | 2.7mm | |
| Height | 2.7mm | |
| Length | 5.1816mm | |
| Width | 2.7mm | |
| REACH SVHC | No SVHC | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |
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1N5817G Documents
Download datasheets and manufacturer documentation for 1N5817G
- Datasheets1N5817-5819 Datasheet 1N5817G-ON-Semiconductor-datasheet-8208299.pdf 1N5817G-ON-Semiconductor-datasheet-520286.pdf 1N5817G-ON-Semiconductor-datasheet-14054056.pdf 1N5817G-ON-Semiconductor-datasheet-9572407.pdf
- PCN Design/SpecificationMetal Chg/Die Shrink Upd 22/Sep/2016
- Environmental InformationMaterial Declaration 1N5817G
- RohsStatementON-Semiconductor-1N5817G.pdf
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