ON Semiconductor 2SC5226A-5-TL-E RF BJT Transistors
10V 70mA
IN STOCK
: 15000
Min. : 1
Mult. : 1
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2SC5226A-5-TL-E Tech Specifications
| Category | Transistors - Bipolar (BJT) - RF | |
| Manufacturer | ON Semiconductor | |
| Lifecycle Status | ACTIVE (Last Updated: 2 days ago) | |
| Factory Lead Time | 4 Weeks | |
| Mounting Type | Surface Mount | |
| Package / Case | SC-70, SOT-323 | |
| Surface Mount | YES | |
| Number of Pins | 3Pins | |
| Transistor Element Material | SILICON | |
| Collector-Emitter Breakdown Voltage | 10V | |
| Number of Elements | 1 Element | |
| Operating Temperature | 150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Published | 2011 | |
| JESD-609 Code | e6 | |
| Pbfree Code | yes | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 3Terminations | |
| ECCN Code | EAR99 | |
| Terminal Finish | Tin/Bismuth (Sn/Bi) | |
| Max Power Dissipation | 150mW | |
| Terminal Position | DUAL |
| Terminal Form | GULL WING | |
| Frequency | 7GHz | |
| Pin Count | 3 | |
| Element Configuration | Single | |
| Power Dissipation | 150mW | |
| Gain Bandwidth Product | 7 GHz | |
| Polarity/Channel Type | NPN | |
| Transistor Type | NPN | |
| Collector Emitter Voltage (VCEO) | 10V | |
| Max Collector Current | 70mA | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 135 @ 20mA 5V | |
| Gain | 12dB | |
| Transition Frequency | 7000MHz | |
| Max Breakdown Voltage | 10V | |
| Collector Base Voltage (VCBO) | 20V | |
| Emitter Base Voltage (VEBO) | 2V | |
| Noise Figure (dB Typ @ f) | 1dB @ 1GHz | |
| Height | 900μm | |
| Length | 2mm | |
| Width | 1.25mm | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |
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2SC5226A-5-TL-E Documents
Download datasheets and manufacturer documentation for 2SC5226A-5-TL-E
- Environmental InformationMaterial Declaration 2SC5226A-5-TL-E
- PCN Design/SpecificationRaw Material Change 22/Jul/2015
- Datasheets2SC5226A
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