ON Semiconductor 2SC5415AE-TD-E RF BJT Transistors
12V 100mA
IN STOCK
: 3000
Min. : 1
Mult. : 1
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2SC5415AE-TD-E Tech Specifications
| Category | Transistors - Bipolar (BJT) - RF | |
| Manufacturer | ON Semiconductor | |
| Lifecycle Status | ACTIVE, NOT REC (Last Updated: 2 days ago) | |
| Factory Lead Time | 4 Weeks | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-243AA | |
| Number of Pins | 3Pins | |
| Collector-Emitter Breakdown Voltage | 12V | |
| Current-Collector (Ic) (Max) | 100mA | |
| hFEMin | 90 | |
| Operating Temperature | 150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Published | 2012 | |
| JESD-609 Code | e6 | |
| Pbfree Code | yes | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| ECCN Code | EAR99 | |
| Terminal Finish | Tin/Bismuth (Sn/Bi) |
| Max Power Dissipation | 800mW | |
| Pin Count | 3 | |
| Element Configuration | Single | |
| Gain Bandwidth Product | 6.7 GHz | |
| Transistor Type | NPN | |
| Collector Emitter Voltage (VCEO) | 12V | |
| Max Collector Current | 100mA | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 90 @ 30mA 5V | |
| Gain | 9dB | |
| Max Frequency | 8GHz | |
| Collector Base Voltage (VCBO) | 20V | |
| Emitter Base Voltage (VEBO) | 2V | |
| Noise Figure (dB Typ @ f) | 1.1dB @ 1GHz | |
| Height | 1.5mm | |
| Length | 4.5mm | |
| Width | 2.5mm | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |
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2SC5415AE-TD-E Documents
Download datasheets and manufacturer documentation for 2SC5415AE-TD-E
- Datasheets2SC5415A
- Environmental InformationMaterial Declaration 2SC5415AE-TD-E
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