- All Products
- /
- Discrete Semiconductor Products
- /
- Transistors - JFETs
- /
- 2SK3666-3-TB-E
ON Semiconductor 2SK3666-3-TB-E JFETs Transistors
1.2mA @ 10V -30V 200Ohm 10mA
IN STOCK
: 12000
Min. : 1
Mult. : 1
Not available to buy on line? Want the lower wholesale price? Please sendRFQ, we will respond immediately
2SK3666-3-TB-E Tech Specifications
| Category | Transistors - JFETs | |
| Manufacturer | ON Semiconductor | |
| Lifecycle Status | ACTIVE (Last Updated: 3 days ago) | |
| Factory Lead Time | 4 Weeks | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-236-3, SC-59, SOT-23-3 | |
| Number of Pins | 3Pins | |
| Weight | 7.994566mg | |
| Breakdown Voltage / V | 30V | |
| Operating Temperature | 150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Published | 2011 | |
| JESD-609 Code | e6 | |
| Pbfree Code | yes | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Termination | SMD/SMT | |
| ECCN Code | EAR99 | |
| Terminal Finish | Tin/Bismuth (Sn/Bi) | |
| Max Power Dissipation | 200mW |
| Base Part Number | 2SK3666 | |
| Pin Count | 3 | |
| Element Configuration | Single | |
| Power Dissipation | 200mW | |
| FET Type | N-Channel | |
| Input Capacitance (Ciss) (Max) @ Vds | 4pF @ 10V | |
| Continuous Drain Current (ID) | 10mA | |
| Gate to Source Voltage (Vgs) | -30V | |
| Drain to Source Breakdown Voltage | 30V | |
| Drain to Source Resistance | 200Ohm | |
| Current - Drain (Idss) @ Vds (Vgs=0) | 1.2mA @ 10V | |
| Voltage - Cutoff (VGS off) @ Id | 180mV @ 1μA | |
| Resistance - RDS(On) | 200Ohm | |
| Current Drain (Id) - Max | 10mA | |
| Height | 1.1mm | |
| Length | 2.9mm | |
| Width | 1.5mm | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |
Select at least one checkbox above to show similar products in this category.
Index :
0123456789ABCDEFGHIJKLMNOPQRSTUVWXYZ