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4N35M Tech Specifications
Category | Optoisolators - Transistor, Photovoltaic Output | |
Manufacturer | ON Semiconductor | |
Lifecycle Status | ACTIVE (Last Updated: 4 days ago) | |
Factory Lead Time | 6 Weeks | |
Contact Plating | Tin | |
Mount | Through Hole | |
Mounting Type | Through Hole | |
Package / Case | 6-DIP (0.300, 7.62mm) | |
Number of Pins | 6Pins | |
Supplier Device Package | 6-DIP | |
Weight | 855mg | |
Collector-Emitter Saturation Voltage | 300mV | |
Current Transfer Ratio-Min | 100% @ 10mA | |
Number of Elements | 1 Element | |
Operating Temperature | -40°C~100°C | |
Packaging | Tube | |
Published | 2008 | |
Part Status | Active | |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
Max Operating Temperature | 100°C | |
Min Operating Temperature | -40°C | |
Max Power Dissipation | 250mW | |
Base Part Number | 4N35 | |
Voltage - Isolation | 4170Vrms | |
Output Voltage | 30V |
Output Type | Transistor with Base | |
Number of Channels | 1Channel | |
Number of Circuits | 1Circuit | |
Power Dissipation | 250mW | |
Voltage - Forward (Vf) (Typ) | 1.18V | |
Input Type | DC | |
Forward Current | 60mA | |
Max Output Voltage | 30V | |
Rise Time | 2μs | |
Forward Voltage | 1.5V | |
Collector Emitter Voltage (VCEO) | 300mV | |
Reverse Breakdown Voltage | 6V | |
Max Input Current | 50mA | |
Current - DC Forward (If) (Max) | 60mA | |
Input Current | 10mA | |
Turn On / Turn Off Time (Typ) | 2μs, 2μs | |
Vce Saturation (Max) | 300mV | |
Reverse Voltage (DC) | 6V | |
Height | 6.35mm | |
Length | 6.35mm | |
Width | 6.35mm | |
REACH SVHC | No SVHC | |
Radiation Hardening | No | |
RoHS Status | ROHS3 Compliant | |
Lead Free | Lead Free |
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4N35M Documents
Download datasheets and manufacturer documentation for 4N35M
- Datasheets4N25-28M,35-37M
- Environmental InformationMaterial Declaration 4N35M
- PCN Design/SpecificationLogo 17/Aug/2017
- PCN PackagingMult Devices 24/Oct/2017
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