55GN01FA-TL-H Tech Specifications

Category Transistors - Bipolar (BJT) - RF
Manufacturer ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Factory Lead Time 7 Weeks
Mounting Type Surface Mount
Package / Case SC-81
Surface Mount YES
Number of Pins 3Pins
Collector-Emitter Breakdown Voltage 10V
Number of Elements 1 Element
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2012
JESD-609 Code e6
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Tin/Bismuth (Sn/Bi)
Max Power Dissipation 250mW
Frequency 5.5GHz
Pin Count 3
Configuration Single
Power Dissipation 250mW
Halogen Free Halogen Free
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 10V
Max Collector Current 70mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 10mA 5V
Gain 11dB ~ 19dB @ 1GHz ~ 400MHz
Transition Frequency 3000MHz
Frequency - Transition 4.5GHz~5.5GHz
Collector Base Voltage (VCBO) 20V
Emitter Base Voltage (VEBO) 3V
Noise Figure (dB Typ @ f) 1.9dB @ 1GHz
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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