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BC847BPDXV6T1G Tech Specifications

Category Transistors - Bipolar (BJT) - Arrays
Manufacturer ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Factory Lead Time 5 Weeks
Contact Plating Tin
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Surface Mount YES
Number of Pins 6Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 45V
Collector-Emitter Saturation Voltage 600mV
Number of Elements 2 Elements
hFEMin 200
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2004
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6Terminations
ECCN Code EAR99
Max Power Dissipation 357mW
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Current Rating 100mA
Frequency 100MHz
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number BC847BPD
Pin Count 6
Polarity NPN, PNP
Element Configuration Dual
Power Dissipation 500mW
Transistor Application AMPLIFIER
Halogen Free Halogen Free
Gain Bandwidth Product 100MHz
Transistor Type NPN, PNP
Collector Emitter Voltage (VCEO) 45V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA 5V
Current - Collector Cutoff (Max) 15nA ICBO
Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 100mA
Transition Frequency 100MHz
Max Breakdown Voltage 45V
Collector Base Voltage (VCBO) 50V
Emitter Base Voltage (VEBO) 5V
Height 600μm
Length 1.7mm
Width 1.3mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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