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BCX19LT1G Tech Specifications

Category Transistors - Bipolar (BJT) - Single
Manufacturer ON Semiconductor
Factory Lead Time 4 Weeks
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Surface Mount YES
Package / Case TO-236-3, SC-59, SOT-23-3
Mounting Type Surface Mount
Contact Plating Tin
Number of Pins 3Pins
Transistor Element Material SILICON
hFEMin 100
Number of Elements 1 Element
Collector-Emitter Saturation Voltage 620mV
Collector-Emitter Breakdown Voltage 45V
Published 2002
Packaging Cut Tape (CT)
Operating Temperature -55°C~150°C TJ
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Type General Purpose
Voltage - Rated DC 45V
Max Power Dissipation 300mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 500mA
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number BCX19
Pin Count 3
Element Configuration Single
Power Dissipation 300mW
Transistor Type NPN
Collector Emitter Voltage (VCEO) 45V
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 100mA 1V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 620mV @ 50mA, 500mA
Max Breakdown Voltage 45V
Collector Base Voltage (VCBO) 50V
Emitter Base Voltage (VEBO) 5V
Width 1.3mm
Length 2.9mm
Height 940μm
RoHS Status ROHS3 Compliant
Radiation Hardening No
REACH SVHC No SVHC
Lead Free Lead Free
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BCX19LT1G Documents

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