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DTA115EET1G Tech Specifications

Category Transistors - Bipolar (BJT) - Single, Pre-Biased
Manufacturer ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Factory Lead Time 2 Weeks
Contact Plating Tin
Surface Mount YES
Package / Case SC-75, SOT-416
Mounting Type Surface Mount
Number of Pins 3Pins
Collector-Emitter Breakdown Voltage 50V
hFEMin 80
Number of Elements 1 Element
Published 2006
Packaging Tape & Reel (TR)
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Additional Feature BUILT-IN BIAS RESISTOR RATIO IS 1
Voltage - Rated DC -50V
Max Power Dissipation 200mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating -100mA
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number DTA115
Pin Count 3
Polarity PNP
Element Configuration Single
Power Dissipation 200mW
Transistor Application SWITCHING
Halogen Free Halogen Free
Transistor Type PNP - Pre-Biased
Collector Emitter Voltage (VCEO) 50V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA 10V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 250mV @ 300μA, 10mA
Max Breakdown Voltage 50V
Resistor - Base (R1) 100 k Ω
Continuous Collector Current 100mA
Resistor - Emitter Base (R2) 100 k Ω
RoHS Status ROHS3 Compliant
Radiation Hardening No
Lead Free Lead Free
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DTA115EET1G Documents

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