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ECH8690-TL-H Tech Specifications
| Category | Transistors - FETs, MOSFETs - Arrays | |
| Manufacturer | ON Semiconductor | |
| Lifecycle Status | ACTIVE (Last Updated: 6 days ago) | |
| Factory Lead Time | 21 Weeks | |
| Mounting Type | Surface Mount | |
| Package / Case | 8-SMD, Flat Lead | |
| Surface Mount | YES | |
| Number of Pins | 8Pins | |
| Current - Continuous Drain (Id) @ 25℃ | 4.7A 3.5A | |
| Number of Elements | 2 Elements | |
| Operating Temperature | 150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| JESD-609 Code | e6 | |
| Pbfree Code | yes | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| ECCN Code | EAR99 | |
| Terminal Finish | Tin/Bismuth (Sn/Bi) | |
| Max Power Dissipation | 1.5W |
| Pin Count | 8 | |
| Element Configuration | Dual | |
| Operating Mode | ENHANCEMENT MODE | |
| Power Dissipation | 1.8W | |
| FET Type | N and P-Channel | |
| Rds On (Max) @ Id, Vgs | 55m Ω @ 2A, 10V | |
| Input Capacitance (Ciss) (Max) @ Vds | 955pF @ 20V | |
| Gate Charge (Qg) (Max) @ Vgs | 18nC @ 10V | |
| Polarity/Channel Type | N-CHANNEL AND P-CHANNEL | |
| Continuous Drain Current (ID) | 3.5A | |
| Gate to Source Voltage (Vgs) | 20V | |
| Drain Current-Max (Abs) (ID) | 4.7A | |
| Drain to Source Breakdown Voltage | 60V | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| FET Feature | Logic Level Gate, 4V Drive | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |
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ECH8690-TL-H Documents
Download datasheets and manufacturer documentation for ECH8690-TL-H
- ReachStatementON-Semiconductor-company-79.pdf
- Environmental InformationMaterial Declaration ECH8690-TL-H
- DatasheetsECH8690 ECH8690-TL-H-ON-Semiconductor-datasheet-37173961.pdf
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