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EMC5DXV5T1G Tech Specifications

Category Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Manufacturer ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Factory Lead Time 2 Weeks
Mounting Type Surface Mount
Package / Case SOT-553
Surface Mount YES
Number of Pins 5Pins
Collector-Emitter Breakdown Voltage 50V
Collector-Emitter Saturation Voltage 250mV
Number of Elements 2 Elements
Packaging Cut Tape (CT)
Published 2010
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Additional Feature BUILT-IN BIAS RESISTOR RATIO IS 1
Voltage - Rated DC 50V
Max Power Dissipation 500mW
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Current Rating 100mA
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 5
Polarity NPN, PNP
Configuration COMPLEX
Power Dissipation 500mW
Transistor Application SWITCHING
Halogen Free Halogen Free
Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual)
Collector Emitter Voltage (VCEO) 50V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA 10V / 20 @ 5mA 10V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 250mV @ 300μA, 10mA
Max Breakdown Voltage 50V
Emitter Base Voltage (VEBO) 6V
Resistor - Base (R1) 47k Ω, 4.7k Ω
Continuous Collector Current 100mA
Resistor - Emitter Base (R2) 47k Ω, 10k Ω
Height 600μm
Length 1.7mm
Width 1.3mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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