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FCPF20N60 Tech Specifications

Category Transistors - FETs, MOSFETs - Single
Manufacturer ON Semiconductor
Lifecycle Status ACTIVE, NOT REC (Last Updated: 3 days ago)
Factory Lead Time 13 Weeks
Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3Pins
Weight 2.27g
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 20A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 39W Tc
Turn Off Delay Time 230 ns
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series SuperFET™
JESD-609 Code e3
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Resistance 190MOhm
Voltage - Rated DC 600V
Current Rating 20A
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 39W
Case Connection ISOLATED
Turn On Delay Time 62 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 190m Ω @ 10A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3080pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 98nC @ 10V
Rise Time 140ns
Vgs (Max) ±30V
Fall Time (Typ) 65 ns
Continuous Drain Current (ID) 20A
Threshold Voltage 5V
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 600V
Pulsed Drain Current-Max (IDM) 60A
Avalanche Energy Rating (Eas) 690 mJ
Height 9.19mm
Length 10.16mm
Width 4.7mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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FCPF20N60 Documents

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