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FDB047N10 Tech Specifications

Category Transistors - FETs, MOSFETs - Single
Manufacturer ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Factory Lead Time 8 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3Pins
Weight 1.762g
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 120A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 375W Tc
Turn Off Delay Time 344 ns
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Series PowerTrench®
Published 2012
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
ECCN Code EAR99
Resistance 4.7MOhm
Terminal Finish Tin (Sn)
Terminal Form GULL WING
JESD-30 Code R-PSSO-G2
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 375W
Case Connection DRAIN
Turn On Delay Time 174 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4.7m Ω @ 75A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 15265pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 210nC @ 10V
Rise Time 386ns
Vgs (Max) ±20V
Fall Time (Typ) 244 ns
Continuous Drain Current (ID) 120A
Threshold Voltage 3.5V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 100V
Pulsed Drain Current-Max (IDM) 656A
Nominal Vgs 3.5 V
Height 4.83mm
Length 10.67mm
Width 11.33mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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FDB047N10 Documents

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