FDG6322C Tech Specifications

Category Transistors - FETs, MOSFETs - Arrays
Manufacturer ON Semiconductor
Factory Lead Time 10 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Package / Case 6-TSSOP, SC-88, SOT-363
Mounting Type Surface Mount
Mount Surface Mount
Number of Pins 6Pins
Weight 28mg
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 220mA 410mA
Turn Off Delay Time 55 ns
Number of Elements 2 Elements
Published 2017
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6Terminations
ECCN Code EAR99
Resistance 4Ohm
Terminal Finish Tin (Sn)
Additional Feature LOGIC LEVEL COMPATIBLE
Max Power Dissipation 300mW
Terminal Form GULL WING
Current Rating 220mA
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 300mW
FET Type N and P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4 Ω @ 220mA, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 9.5pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 0.4nC @ 4.5V
Rise Time 8ns
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Fall Time (Typ) 8 ns
Continuous Drain Current (ID) 220mA
Threshold Voltage 850mV
Gate to Source Voltage (Vgs) 8V
Drain to Source Breakdown Voltage 25V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Nominal Vgs 850 mV
Width 1.25mm
Length 2mm
Height 1mm
RoHS Status ROHS3 Compliant
Radiation Hardening No
REACH SVHC No SVHC
Lead Free Lead Free
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