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FDG6335N Tech Specifications

Category Transistors - FETs, MOSFETs - Arrays
Manufacturer ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Factory Lead Time 10 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Number of Pins 6Pins
Weight 28mg
Transistor Element Material SILICON
Number of Elements 2 Elements
Turn Off Delay Time 9 ns
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series PowerTrench®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6Terminations
ECCN Code EAR99
Resistance 300MOhm
Voltage - Rated DC 20V
Max Power Dissipation 300mW
Terminal Form GULL WING
Current Rating 700mA
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 300mW
Turn On Delay Time 5 ns
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 300m Ω @ 700mA, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 113pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 1.4nC @ 4.5V
Rise Time 7ns
Fall Time (Typ) 7 ns
Continuous Drain Current (ID) 700mA
Threshold Voltage 1.1V
Gate to Source Voltage (Vgs) 12V
Drain Current-Max (Abs) (ID) 0.7A
Drain to Source Breakdown Voltage 20V
FET Technology METAL-OXIDE SEMICONDUCTOR
Max Junction Temperature (Tj) 150°C
FET Feature Logic Level Gate
Height 1.1mm
Length 2mm
Width 1.25mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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