FDP26N40 Tech Specifications

Category Transistors - FETs, MOSFETs - Single
Manufacturer ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Factory Lead Time 5 Weeks
Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3Pins
Weight 1.8g
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 26A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 265W Tc
Turn Off Delay Time 115 ns
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series UniFET™
Published 2013
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Resistance 160MOhm
Additional Feature AVALANCHE RATED
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 265W
Turn On Delay Time 45 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 160m Ω @ 13A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3185pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 60nC @ 10V
Rise Time 100ns
Vgs (Max) ±30V
Fall Time (Typ) 66 ns
Continuous Drain Current (ID) 26A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 400V
Height 15.38mm
Length 10.1mm
Width 4.7mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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