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FDS4935BZ Tech Specifications

Category Transistors - FETs, MOSFETs - Arrays
Manufacturer ON Semiconductor
Factory Lead Time 10 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Package / Case 8-SOIC (0.154, 3.90mm Width)
Mounting Type Surface Mount
Mount Surface Mount
Number of Pins 8Pins
Weight 187mg
Transistor Element Material SILICON
Turn Off Delay Time 68 ns
Number of Elements 2 Elements
Current - Continuous Drain (Id) @ 25℃ 6.9A
Published 2006
Series PowerTrench®
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8Terminations
Termination SMD/SMT
ECCN Code EAR99
Resistance 22MOhm
Terminal Finish Tin (Sn)
Additional Feature ESD PROTECTION
Voltage - Rated DC -30V
Max Power Dissipation 1.6W
Terminal Form GULL WING
Current Rating -6.9A
Number of Channels 2Channels
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.6W
Turn On Delay Time 12 ns
Power - Max 900mW
FET Type 2 P-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 22m Ω @ 6.9A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1360pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 40nC @ 10V
Rise Time 13ns
Drain to Source Voltage (Vdss) 30V
Fall Time (Typ) 13 ns
Continuous Drain Current (ID) -6.9A
Threshold Voltage -1.9V
Gate to Source Voltage (Vgs) 25V
Drain to Source Breakdown Voltage -30V
Dual Supply Voltage -30V
FET Technology METAL-OXIDE SEMICONDUCTOR
Max Junction Temperature (Tj) 150°C
FET Feature Logic Level Gate
Nominal Vgs 1.9 V
Width 4mm
Length 5mm
Height 1.75mm
RoHS Status ROHS3 Compliant
Radiation Hardening No
REACH SVHC No SVHC
Lead Free Lead Free
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