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FDS6912A Tech Specifications

Category Transistors - FETs, MOSFETs - Arrays
Manufacturer ON Semiconductor
Factory Lead Time 10 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Package / Case 8-SOIC (0.154, 3.90mm Width)
Mount Surface Mount
Mounting Type Surface Mount
Number of Pins 8Pins
Weight 187mg
Transistor Element Material SILICON
Turn Off Delay Time 23 ns
Number of Elements 2 Elements
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series PowerTrench®
Published 2003
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8Terminations
Termination SMD/SMT
ECCN Code EAR99
Resistance 28MOhm
Terminal Finish Tin (Sn)
Additional Feature LOGIC LEVEL COMPATIBLE
Voltage - Rated DC 30V
Max Power Dissipation 1.6W
Terminal Form GULL WING
Current Rating 6A
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.6W
Turn On Delay Time 8 ns
Power - Max 900mW
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 28m Ω @ 6A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 575pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 8.1nC @ 5V
Rise Time 5ns
Fall Time (Typ) 5 ns
Continuous Drain Current (ID) 6A
Threshold Voltage 1.9V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 6A
Drain to Source Breakdown Voltage 30V
Dual Supply Voltage 30V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Width 4mm
Length 5mm
Height 1.5mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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