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FGA25N120ANTDTU Tech Specifications

Category Transistors - IGBTs - Single
Manufacturer ON Semiconductor
Factory Lead Time 6 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Number of Pins 3Pins
Weight 6.40101g
Collector-Emitter Breakdown Voltage 1.2kV
Collector-Emitter Saturation Voltage 2.65V
Test Conditions 600V, 25A, 10 Ω, 15V
Turn Off Delay Time 190 ns
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2004
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Tin (Sn)
HTS Code 8541.29.00.95
Voltage - Rated DC 1.2kV
Max Power Dissipation 312W
Current Rating 50A
Base Part Number FGA25N120A
Element Configuration Single
Power Dissipation 312mW
Input Type Standard
Turn On Delay Time 50 ns
Rise Time 60ns
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 50A
Reverse Recovery Time 350 ns
Voltage - Collector Emitter Breakdown (Max) 1200V
Vce(on) (Max) @ Vge, Ic 2.65V @ 15V, 50A
Max Junction Temperature (Tj) 150°C
Continuous Collector Current 50A
IGBT Type NPT and Trench
Gate Charge 200nC
Current - Collector Pulsed (Icm) 90A
Td (on/off) @ 25°C 50ns/190ns
Switching Energy 4.1mJ (on), 960μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 7.5V
Height 23.8mm
Length 15.8mm
Width 5mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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