FGA25N120ANTDTU-F109 Tech Specifications

Category Transistors - IGBTs - Single
Manufacturer ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Factory Lead Time 6 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Number of Pins 3Pins
Weight 6.401g
Collector-Emitter Breakdown Voltage 1.2kV
Test Conditions 600V, 25A, 10 Ω, 15V
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2004
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Power Dissipation 312W
Base Part Number FGA25N120A
Rise Time-Max 90ns
Element Configuration Single
Input Type Standard
Power - Max 312W
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 50A
Reverse Recovery Time 350 ns
Voltage - Collector Emitter Breakdown (Max) 1200V
Vce(on) (Max) @ Vge, Ic 2.65V @ 15V, 50A
IGBT Type NPT and Trench
Gate Charge 200nC
Current - Collector Pulsed (Icm) 90A
Td (on/off) @ 25°C 50ns/190ns
Switching Energy 4.1mJ (on), 960μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 7.5V
Fall Time-Max (tf) 180ns
Height 18.9mm
Length 15.8mm
Width 5mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
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