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FGH40T120SMD-F155 Tech Specifications

Category Transistors - IGBTs - Single
Manufacturer ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Factory Lead Time 5 Weeks
Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3Pins
Weight 6.39g
Collector-Emitter Breakdown Voltage 1.2kV
Collector-Emitter Saturation Voltage 1.8V
Test Conditions 600V, 40A, 10 Ω, 15V
Turn Off Delay Time 475 ns
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2013
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 555W
Element Configuration Single
Power Dissipation 555W
Input Type Standard
Turn On Delay Time 40 ns
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 80A
Reverse Recovery Time 65 ns
Voltage - Collector Emitter Breakdown (Max) 1200V
Vce(on) (Max) @ Vge, Ic 2.4V @ 15V, 40A
Max Junction Temperature (Tj) 175°C
Continuous Collector Current 80A
IGBT Type Trench Field Stop
Gate Charge 370nC
Current - Collector Pulsed (Icm) 160A
Td (on/off) @ 25°C 40ns/475ns
Switching Energy 2.7mJ (on), 1.1mJ (off)
Gate-Emitter Voltage-Max 25V
Gate-Emitter Thr Voltage-Max 7.5V
Height 24.75mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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