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FGL60N100BNTD Tech Specifications

Category Transistors - IGBTs - Single
Manufacturer ON Semiconductor
Lifecycle Status ACTIVE, NOT REC (Last Updated: 6 days ago)
Factory Lead Time 4 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-264-3, TO-264AA
Number of Pins 3Pins
Weight 6.756g
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 600V
Collector-Emitter Saturation Voltage 1.5V
Number of Elements 1 Element
Test Conditions 600V, 60A, 51 Ω, 15V
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2017
JESD-609 Code e3
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish MATTE TIN
HTS Code 8541.29.00.95
Voltage - Rated DC 1kV
Max Power Dissipation 180W
Current Rating 60A
Polarity NPN
Element Configuration Single
Power Dissipation 180W
Input Type Standard
Transistor Application POWER CONTROL
Rise Time 320ns
Collector Emitter Voltage (VCEO) 1kV
Max Collector Current 60A
Reverse Recovery Time 1.2 μs
Voltage - Collector Emitter Breakdown (Max) 1000V
Max Breakdown Voltage 1kV
Turn On Time 460 ns
Vce(on) (Max) @ Vge, Ic 2.9V @ 15V, 60A
Turn Off Time-Nom (toff) 760 ns
IGBT Type NPT and Trench
Gate Charge 275nC
Current - Collector Pulsed (Icm) 120A
Td (on/off) @ 25°C 140ns/630ns
Height 26mm
Length 20mm
Width 5mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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