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FQPF19N20C Tech Specifications

Category Transistors - FETs, MOSFETs - Single
Manufacturer ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Factory Lead Time 4 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3Pins
Weight 2.27g
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 19A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 43W Tc
Turn Off Delay Time 135 ns
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series QFET®
Published 2004
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Voltage - Rated DC 200V
Current Rating 19A
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 43W
Case Connection ISOLATED
Turn On Delay Time 15 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 170m Ω @ 9.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1080pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 53nC @ 10V
Rise Time 150ns
Vgs (Max) ±30V
Fall Time (Typ) 115 ns
Continuous Drain Current (ID) 19A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 200V
Pulsed Drain Current-Max (IDM) 76A
Height 9.19mm
Length 10.16mm
Width 4.7mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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FQPF19N20C Documents

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