HGTG11N120CND Tech Specifications

Category Transistors - IGBTs - Single
Manufacturer ON Semiconductor
Lifecycle Status ACTIVE, NOT REC (Last Updated: 2 days ago)
Factory Lead Time 5 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3Pins
Weight 6.39g
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 1.2kV
Collector-Emitter Saturation Voltage 2.1V
Number of Elements 1 Element
Test Conditions 960V, 11A, 10 Ω, 15V
Turn Off Delay Time 180 ns
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2016
JESD-609 Code e3
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature LOW CONDUCTION LOSS
HTS Code 8541.29.00.95
Voltage - Rated DC 1.2kV
Max Power Dissipation 298W
Current Rating 43A
Polarity NPN
Element Configuration Single
Power Dissipation 298W
Input Type Standard
Turn On Delay Time 23 ns
Transistor Application MOTOR CONTROL
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 43A
Reverse Recovery Time 70 ns
Voltage - Collector Emitter Breakdown (Max) 1200V
Turn On Time 33 ns
Vce(on) (Max) @ Vge, Ic 2.4V @ 15V, 11A
Turn Off Time-Nom (toff) 570 ns
IGBT Type NPT
Gate Charge 100nC
Current - Collector Pulsed (Icm) 80A
Td (on/off) @ 25°C 23ns/180ns
Switching Energy 950μJ (on), 1.3mJ (off)
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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