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HGTG12N60A4 Tech Specifications

Category Transistors - IGBTs - Single
Manufacturer ON Semiconductor
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3Pins
Weight 6.39g
Collector-Emitter Breakdown Voltage 600V
Collector-Emitter Saturation Voltage 2.1V
Test Conditions 390V, 12A, 10 Ω, 15V
Operating Temperature -55°C~150°C TJ
Packaging Tube
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Termination Through Hole
Voltage - Rated DC 600V
Max Power Dissipation 167W
Current Rating 54A
Base Part Number HGTG12N60
Element Configuration Single
Power Dissipation 167W
Input Type Standard
Rise Time 8ns
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 54A
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 12A
Gate Charge 78nC
Current - Collector Pulsed (Icm) 96A
Td (on/off) @ 25°C 17ns/96ns
Switching Energy 55μJ (on), 50μJ (off)
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
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HGTG12N60A4 Documents

Download datasheets and manufacturer documentation for   HGTG12N60A4

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