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HGTG12N60A4D Tech Specifications

Category Transistors - IGBTs - Single
Manufacturer ON Semiconductor
Lifecycle Status ACTIVE, NOT REC (Last Updated: 2 days ago)
Factory Lead Time 4 Weeks
Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3Pins
Weight 6.39g
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 600V
Collector-Emitter Saturation Voltage 2V
Number of Elements 1 Element
Test Conditions 390V, 12A, 10 Ω, 15V
Turn Off Delay Time 96 ns
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2002
JESD-609 Code e3
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Additional Feature LOW CONDUCTION LOSS
HTS Code 8541.29.00.95
Voltage - Rated DC 600V
Max Power Dissipation 167W
Current Rating 54A
Base Part Number HGTG12N60
Element Configuration Single
Power Dissipation 167W
Case Connection COLLECTOR
Input Type Standard
Turn On Delay Time 17 ns
Transistor Application POWER CONTROL
Rise Time 16ns
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 54A
Reverse Recovery Time 30 ns
Turn On Time 33 ns
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 12A
Continuous Collector Current 60A
Turn Off Time-Nom (toff) 180 ns
Gate Charge 78nC
Current - Collector Pulsed (Icm) 96A
Td (on/off) @ 25°C 17ns/96ns
Switching Energy 55μJ (on), 50μJ (off)
Height 20.82mm
Length 15.87mm
Width 4.82mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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