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HGTG20N60B3D Tech Specifications

Category Transistors - IGBTs - Single
Manufacturer ON Semiconductor
Lifecycle Status ACTIVE, NOT REC (Last Updated: 2 days ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3Pins
Weight 6.39g
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 600V
Collector-Emitter Saturation Voltage 1.8V
Number of Elements 1 Element
Turn Off Delay Time 220 ns
Operating Temperature -40°C~150°C TJ
Packaging Tube
Published 2011
JESD-609 Code e3
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature LOW CONDUCTION LOSS
HTS Code 8541.29.00.95
Voltage - Rated DC 600V
Max Power Dissipation 165W
Current Rating 20A
Base Part Number HGTG20N60
Polarity NPN
Element Configuration Single
Power Dissipation 165W
Case Connection COLLECTOR
Input Type Standard
Turn On Delay Time 25 ns
Transistor Application MOTOR CONTROL
Rise Time 20ns
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 40A
Reverse Recovery Time 55ns
Max Breakdown Voltage 600V
Turn On Time 45 ns
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 20A
Turn Off Time-Nom (toff) 360 ns
Gate Charge 80nC
Current - Collector Pulsed (Icm) 160A
Switching Energy 475μJ (on), 1.05mJ (off)
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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