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HGTG30N60A4D Tech Specifications

Category Transistors - IGBTs - Single
Manufacturer ON Semiconductor
Lifecycle Status ACTIVE, NOT REC (Last Updated: 2 days ago)
Factory Lead Time 5 Weeks
Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3Pins
Weight 6.39g
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 600V
Collector-Emitter Saturation Voltage 1.8V
Number of Elements 1 Element
Test Conditions 390V, 30A, 3 Ω, 15V
Turn Off Delay Time 150 ns
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2016
JESD-609 Code e3
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Additional Feature LOW CONDUCTION LOSS
HTS Code 8541.29.00.95
Voltage - Rated DC 600V
Max Power Dissipation 463W
Current Rating 30A
Base Part Number HGTG30N60
Element Configuration Single
Power Dissipation 463W
Case Connection COLLECTOR
Input Type Standard
Turn On Delay Time 25 ns
Transistor Application POWER CONTROL
Rise Time 12s
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 75A
Reverse Recovery Time 55ns
Turn On Time 35 ns
Vce(on) (Max) @ Vge, Ic 2.6V @ 15V, 30A
Turn Off Time-Nom (toff) 238 ns
Gate Charge 225nC
Current - Collector Pulsed (Icm) 240A
Td (on/off) @ 25°C 25ns/150ns
Switching Energy 280μJ (on), 240μJ (off)
Height 20.82mm
Length 15.87mm
Width 4.82mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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