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HGTP10N120BN Tech Specifications

Category Transistors - IGBTs - Single
Manufacturer ON Semiconductor
Lifecycle Status ACTIVE, NOT REC (Last Updated: 2 days ago)
Factory Lead Time 44 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3Pins
Weight 1.8g
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 1.2kV
Collector-Emitter Saturation Voltage 2.45V
Number of Elements 1 Element
Test Conditions 960V, 10A, 10 Ω, 15V
Operating Temperature -55°C~150°C TJ
Packaging Tube
JESD-609 Code e3
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature LOW CONDUCTION LOSS
HTS Code 8541.29.00.95
Voltage - Rated DC 1.2kV
Max Power Dissipation 49.2W
Current Rating 35A
Element Configuration Single
Power Dissipation 298W
Case Connection COLLECTOR
Input Type Standard
Transistor Application MOTOR CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 35A
Voltage - Collector Emitter Breakdown (Max) 1200V
Max Breakdown Voltage 300V
Turn On Time 32 ns
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 10A
Continuous Collector Current 35A
Turn Off Time-Nom (toff) 330 ns
IGBT Type NPT
Gate Charge 100nC
Current - Collector Pulsed (Icm) 80A
Td (on/off) @ 25°C 23ns/165ns
Switching Energy 320μJ (on), 800μJ (off)
Height 9.4mm
Length 10.67mm
Width 4.83mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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