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J112-D26Z Tech Specifications
| Category | Transistors - JFETs | |
| Manufacturer | ON Semiconductor | |
| Lifecycle Status | ACTIVE (Last Updated: 1 day ago) | |
| Factory Lead Time | 7 Weeks | |
| Mount | Surface Mount, Through Hole | |
| Mounting Type | Through Hole | |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | |
| Number of Pins | 3Pins | |
| Weight | 200.998119mg | |
| Transistor Element Material | SILICON | |
| Number of Elements | 1 Element | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Published | 2006 | |
| Pbfree Code | yes | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 3Terminations | |
| Voltage - Rated DC | 35V | |
| Max Power Dissipation | 625mW | |
| Terminal Position | BOTTOM | |
| Current Rating | 50mA |
| Base Part Number | J112 | |
| Voltage | 35V | |
| Element Configuration | Single | |
| Current | 5A | |
| Operating Mode | DEPLETION MODE | |
| Power Dissipation | 625mW | |
| FET Type | N-Channel | |
| Transistor Application | SWITCHING | |
| Drain to Source Voltage (Vdss) | 35V | |
| Continuous Drain Current (ID) | 5mA | |
| Gate to Source Voltage (Vgs) | -35V | |
| Input Capacitance | 7pF | |
| FET Technology | JUNCTION | |
| Drain to Source Resistance | 50Ohm | |
| Feedback Cap-Max (Crss) | 5 pF | |
| Current - Drain (Idss) @ Vds (Vgs=0) | 5mA @ 15V | |
| Voltage - Cutoff (VGS off) @ Id | 1V @ 1μA | |
| Resistance - RDS(On) | 50Ohm | |
| REACH SVHC | No SVHC | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |
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J112-D26Z Documents
Download datasheets and manufacturer documentation for J112-D26Z
- DatasheetsJ111-12
- Environmental InformationMaterial Declaration J112-D26Z
- PCN Design/SpecificationLogo 17/Aug/2017
- PCN Assembly/OriginAssembly/Test Site Transfer 14/Apr/2015
- PCN PackagingTO92 Packing Updates 01/Jul/2015 Mult Devices 24/Oct/2017
- PCN Part NumberMult Device Part Number Chg 30/May/2017
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