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KSC945CYTA Tech Specifications

Category Transistors - Bipolar (BJT) - Single
Manufacturer ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Factory Lead Time 12 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Number of Pins 3Pins
Weight 240mg
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 50V
Collector-Emitter Saturation Voltage 150mV
Number of Elements 1 Element
hFEMin 40
Operating Temperature 150°C TJ
Packaging Tape & Box (TB)
Published 2002
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Voltage - Rated DC 50V
Max Power Dissipation 250mW
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating 150mA
Frequency 300MHz
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number KSC945
Qualification Status Not Qualified
Element Configuration Single
Power Dissipation 250mW
Transistor Application AMPLIFIER
Gain Bandwidth Product 300MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 50V
Max Collector Current 150mA
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 1mA 6V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 10mA, 100mA
Transition Frequency 300MHz
Max Breakdown Voltage 50V
Collector Base Voltage (VCBO) 60V
Emitter Base Voltage (VEBO) 5V
Height 4.58mm
Length 4.58mm
Width 3.86mm
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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KSC945CYTA Documents

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