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MBT3906DW1T1G Tech Specifications

Category Transistors - Bipolar (BJT) - Arrays
Manufacturer ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Factory Lead Time 8 Weeks
Contact Plating Tin
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Surface Mount YES
Number of Pins 6Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 40V
Collector-Emitter Saturation Voltage -400mV
Number of Elements 2 Elements
hFEMin 60
Operating Temperature -55°C~150°C TJ
Packaging Cut Tape (CT)
Published 2007
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6Terminations
ECCN Code EAR99
Voltage - Rated DC -40V
Max Power Dissipation 150mW
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating -200mA
Frequency 250MHz
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number MBT3906D
Pin Count 6
Polarity PNP
Element Configuration Dual
Power Dissipation 150mW
Transistor Application AMPLIFIER
Halogen Free Halogen Free
Gain Bandwidth Product 250MHz
Transistor Type 2 PNP (Dual)
Collector Emitter Voltage (VCEO) 40V
Max Collector Current 200mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 10mA 1V
Vce Saturation (Max) @ Ib, Ic 400mV @ 5mA, 50mA
Transition Frequency 250MHz
Max Breakdown Voltage 40V
Collector Base Voltage (VCBO) 40V
Emitter Base Voltage (VEBO) 5V
Turn Off Time-Max (toff) 300ns
Turn On Time-Max (ton) 70ns
Height 1mm
Length 2.2mm
Width 1.35mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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