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MBT6429DW1T1G Tech Specifications

Category Transistors - Bipolar (BJT) - Arrays
Manufacturer ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Factory Lead Time 8 Weeks
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Surface Mount YES
Number of Pins 6Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 45V
Collector-Emitter Saturation Voltage 600mV
Number of Elements 2 Elements
hFEMin 500
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2005
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Voltage - Rated DC 40V
Max Power Dissipation 150mW
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 200mA
Frequency 700MHz
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number MBT6429D
Pin Count 6
Polarity NPN
Element Configuration Dual
Power Dissipation 150mW
Transistor Application AMPLIFIER
Gain Bandwidth Product 700MHz
Transistor Type 2 NPN (Dual)
Collector Emitter Voltage (VCEO) 45V
Max Collector Current 200mA
DC Current Gain (hFE) (Min) @ Ic, Vce 500 @ 100μA 5V
Current - Collector Cutoff (Max) 100nA
Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 100mA
Transition Frequency 100MHz
Max Breakdown Voltage 45V
Collector Base Voltage (VCBO) 55V
Emitter Base Voltage (VEBO) 6V
Height 1mm
Length 2.2mm
Width 1.35mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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