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MGSF1N03LT1G Tech Specifications

Category Transistors - FETs, MOSFETs - Single
Manufacturer ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 6 days ago)
Factory Lead Time 24 Weeks
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface Mount YES
Number of Pins 3Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 1.6A Ta
Drive Voltage (Max Rds On, Min Rds On) 4.5V 10V
Number of Elements 1 Element
Power Dissipation (Max) 420mW Ta
Turn Off Delay Time 16 ns
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 1998
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Resistance 80MOhm
Terminal Finish Tin (Sn)
Voltage - Rated DC 30V
Terminal Position DUAL
Terminal Form GULL WING
Current Rating 750mA
Pin Count 3
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 730mW
Turn On Delay Time 2.5 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 100m Ω @ 1.2A, 10V
Vgs(th) (Max) @ Id 2.4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 140pF @ 5V
Rise Time 1ns
Vgs (Max) ±20V
Fall Time (Typ) 1 ns
Continuous Drain Current (ID) 2.1A
Threshold Voltage 1.7V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
Nominal Vgs 1.7 V
Height 1.016mm
Length 3.0226mm
Width 1.397mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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