MJD122TF Tech Specifications

Category Transistors - Bipolar (BJT) - Single
Manufacturer ON Semiconductor
Factory Lead Time 14 Weeks
Lifecycle Status LAST SHIPMENTS (Last Updated: 5 days ago)
Mounting Type Surface Mount
Mount Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3Pins
Weight 260.37mg
Transistor Element Material SILICON
Number of Elements 1 Element
Collector-Emitter Saturation Voltage 2V
Collector-Emitter Breakdown Voltage 100V
hFEMin 1000
Published 2009
Packaging Tape & Reel (TR)
Operating Temperature 150°C TJ
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Voltage - Rated DC 100V
Max Power Dissipation 1.75W
Terminal Form GULL WING
Current Rating 8A
Base Part Number MJD122
JESD-30 Code R-PSSO-G2
Polarity NPN
Element Configuration Single
Transistor Type NPN - Darlington
Collector Emitter Voltage (VCEO) 100V
Max Collector Current 8A
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 4A 4V
Current - Collector Cutoff (Max) 10μA
Vce Saturation (Max) @ Ib, Ic 4V @ 80mA, 8A
Max Breakdown Voltage 100V
Collector Base Voltage (VCBO) 100V
Emitter Base Voltage (VEBO) 5V
Length 6.6mm
Height 2.3mm
Width 6.1mm
RoHS Status ROHS3 Compliant
Radiation Hardening No
REACH SVHC No SVHC
Lead Free Lead Free
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