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MMBD770T1G Tech Specifications

Category Diodes - RF
Manufacturer ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Factory Lead Time 2 Weeks
Package / Case SC-70, SOT-323
Surface Mount YES
Number of Pins 3Pins
Diode Element Material SILICON
Number of Elements 1 Element
Operating Temperature -55°C~125°C TJ
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature LOW REVERSE LEAKAGE
HTS Code 8541.10.00.60
Voltage - Rated DC 70V
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 1A
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number MMBD770
Pin Count 3
Polarity Standard
Max Current Rating 200mA
Element Configuration Single
Diode Type Schottky - Single
Power Dissipation 120mW
Output Current 200mA
Forward Current 200mA
Max Reverse Leakage Current 200nA
Max Surge Current 1A
Forward Voltage 1V
Peak Reverse Current 200nA
Max Repetitive Reverse Voltage (Vrrm) 70V
Capacitance @ Vr, F 1pF @ 20V 1MHz
Peak Non-Repetitive Surge Current 1A
Max Forward Surge Current (Ifsm) 1A
Reverse Voltage (DC) 70V
Frequency Band VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY
Diode Capacitance-Max 1pF
Height 850μm
Length 2.1mm
Width 1.24mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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MMBD770T1G Documents

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