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MMBFJ309LT1G Tech Specifications

Category Transistors - FETs, MOSFETs - RF
Manufacturer ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Factory Lead Time 8 Weeks
Contact Plating Tin
Package / Case TO-236-3, SC-59, SOT-23-3
Surface Mount YES
Number of Pins 3Pins
Weight 1.437803g
Breakdown Voltage / V -25V
Number of Elements 1 Element
Usage Level Military grade
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Voltage - Rated DC -25V
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 30mA
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number MMBFJ309
Pin Count 3
Element Configuration Single
Operating Mode DEPLETION MODE
Power Dissipation 225mW
Transistor Application AMPLIFIER
Halogen Free Halogen Free
Drain to Source Voltage (Vdss) 25V
Transistor Type N-Channel JFET
Continuous Drain Current (ID) 10mA
Gate to Source Voltage (Vgs) 25V
Input Capacitance 5pF
FET Technology JUNCTION
Highest Frequency Band ULTRA HIGH FREQUENCY B
Height 1.016mm
Length 3.0226mm
Width 1.397mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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