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MMBT2222ALT1G Tech Specifications

Category Transistors - Bipolar (BJT) - Single
Manufacturer ON Semiconductor
Factory Lead Time 10 Weeks
Lifecycle Status ACTIVE (Last Updated: 6 days ago)
Surface Mount YES
Package / Case TO-236-3, SC-59, SOT-23-3
Mounting Type Surface Mount
Contact Plating Tin
Number of Pins 3Pins
Transistor Element Material SILICON
hFEMin 100
Number of Elements 1 Element
Collector-Emitter Saturation Voltage 300mV
Collector-Emitter Breakdown Voltage 40V
Published 2006
Series Automotive, AEC-Q101
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Type General Purpose
Voltage - Rated DC 40V
Max Power Dissipation 300mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 600mA
Frequency 300MHz
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number MMBT2222A
Pin Count 3
Element Configuration Single
Power Dissipation 225mW
Transistor Application SWITCHING
Gain Bandwidth Product 300MHz
Transistor Type NPN
Collector Emitter Voltage (VCEO) 40V
Max Collector Current 600mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA 10V
Current - Collector Cutoff (Max) 10nA ICBO
Vce Saturation (Max) @ Ib, Ic 1V @ 50mA, 500mA
Transition Frequency 300MHz
Max Breakdown Voltage 40V
Collector Base Voltage (VCBO) 75V
Emitter Base Voltage (VEBO) 6V
Max Junction Temperature (Tj) 150°C
Turn Off Time-Max (toff) 285ns
Width 1.3mm
Length 2.9mm
Height 1.11mm
RoHS Status ROHS3 Compliant
Radiation Hardening No
REACH SVHC No SVHC
Lead Free Lead Free
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