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MMBT3906LT1G Tech Specifications

Category Transistors - Bipolar (BJT) - Single
Manufacturer ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 19 hours ago)
Factory Lead Time 10 Weeks
Contact Plating Tin
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface Mount YES
Number of Pins 3Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage -40V
Collector-Emitter Saturation Voltage -250mV
Current-Collector (Ic) (Max) 200mA
Number of Elements 1 Element
hFEMin 30
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2004
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Voltage - Rated DC -40V
Max Power Dissipation 300mW
Terminal Position DUAL
Terminal Form GULL WING
Current Rating -200mA
Frequency 250MHz
Base Part Number MMBT3906
Pin Count 3
Element Configuration Single
Power Dissipation 225mW
Gain Bandwidth Product 250MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) -40V
Max Collector Current -200mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 10mA 1V
Vce Saturation (Max) @ Ib, Ic 400mV @ 5mA, 50mA
Transition Frequency 250MHz
Max Breakdown Voltage 40V
Collector Base Voltage (VCBO) -40V
Emitter Base Voltage (VEBO) -5V
Max Junction Temperature (Tj) 150°C
VCEsat-Max 0.4 V
Turn On Time-Max (ton) 70ns
Collector-Base Capacitance-Max 4.5pF
Height 1.11mm
Length 2.9mm
Width 1.3mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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