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MMBT918LT1G Tech Specifications

Category Transistors - Bipolar (BJT) - RF
Manufacturer ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 5 days ago)
Factory Lead Time 2 Weeks
Contact Plating Tin
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface Mount YES
Number of Pins 3Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 15V
Collector-Emitter Saturation Voltage 400mV
Number of Elements 1 Element
hFEMin 20
Operating Temperature -55°C~150°C TJ
Packaging Cut Tape (CT)
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Voltage - Rated DC 15V
Max Power Dissipation 225mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 50mA
Frequency 600MHz
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number MMBT918
Pin Count 3
Element Configuration Single
Power Dissipation 300mW
Gain Bandwidth Product 600MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 15V
Max Collector Current 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 3mA 1V
Gain 11dB
Transition Frequency 600MHz
Max Breakdown Voltage 15V
Collector Base Voltage (VCBO) 30V
Emitter Base Voltage (VEBO) 3V
Noise Figure (dB Typ @ f) 6dB @ 60MHz
Height 1.01mm
Length 3.04mm
Width 1.4mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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MMBT918LT1G Documents

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