ON Semiconductor MMBTH10LT1 RF BJT Transistors
25V
IN STOCK
: 4143
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MMBTH10LT1 Tech Specifications
| Category | Transistors - Bipolar (BJT) - RF | |
| Manufacturer | ON Semiconductor | |
| Lifecycle Status | LAST SHIPMENTS (Last Updated: 2 days ago) | |
| Package / Case | SOT-23-3 | |
| Surface Mount | YES | |
| Number of Pins | 3Pins | |
| Collector-Emitter Breakdown Voltage | 25V | |
| Number of Elements | 1 Element | |
| hFEMin | 60 | |
| Packaging | Cut Tape (CT) | |
| Published | 2003 | |
| JESD-609 Code | e0 | |
| Pbfree Code | no | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 3Terminations | |
| ECCN Code | EAR99 | |
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| Max Operating Temperature | 150°C | |
| Min Operating Temperature | -55°C | |
| Voltage - Rated DC | 25V | |
| Max Power Dissipation | 225mW | |
| Terminal Position | DUAL |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | 240 | |
| Reach Compliance Code | not_compliant | |
| Current Rating | 4mA | |
| Frequency | 650MHz | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Pin Count | 3 | |
| Qualification Status | Not Qualified | |
| Polarity | NPN | |
| Element Configuration | Single | |
| Power Dissipation | 300mW | |
| Transistor Application | AMPLIFIER | |
| Gain Bandwidth Product | 650MHz | |
| Collector Emitter Voltage (VCEO) | 25V | |
| Transition Frequency | 650MHz | |
| Collector Base Voltage (VCBO) | 30V | |
| Emitter Base Voltage (VEBO) | 3V | |
| Collector Current-Max (IC) | 0.025A | |
| DC Current Gain-Min (hFE) | 60 | |
| Collector-Base Capacitance-Max | 0.7pF | |
| RoHS Status | Non-RoHS Compliant | |
| Lead Free | Contains Lead |
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MMBTH10LT1 Documents
Download datasheets and manufacturer documentation for MMBTH10LT1
- DatasheetsNSV,S,MMBTH10L(4L) NSV,S,MMBTH10L(4L) MMBTH10LT1-ON-Semiconductor-datasheet-52577.pdf
- PCN Obsolescence/ EOLMultiple Devices 21/Jan/2010
- ReachStatementON-Semiconductor-company-79.pdf
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