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MMBTH10LT1G Tech Specifications

Category Transistors - Bipolar (BJT) - RF
Manufacturer ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Factory Lead Time 8 Weeks
Contact Plating Tin
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface Mount YES
Number of Pins 3Pins
Weight 4.535924g
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 25V
Collector-Emitter Saturation Voltage 500mV
Number of Elements 1 Element
hFEMin 60
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2001
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Termination SMD/SMT
ECCN Code EAR99
Voltage - Rated DC 25V
Max Power Dissipation 225mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 4mA
Frequency 650MHz
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number MMBTH10
Pin Count 3
Element Configuration Single
Power Dissipation 225mW
Halogen Free Halogen Free
Gain Bandwidth Product 650MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 25V
Max Collector Current 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 4mA 10V
Transition Frequency 650MHz
Max Breakdown Voltage 25V
Collector Base Voltage (VCBO) 30V
Emitter Base Voltage (VEBO) 3V
Max Junction Temperature (Tj) 150°C
Collector-Base Capacitance-Max 0.7pF
Height 1.11mm
Length 3.04mm
Width 1.4mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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