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MMBTH10M3T5G Tech Specifications

Category Transistors - Bipolar (BJT) - RF
Manufacturer ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Factory Lead Time 2 Weeks
Mounting Type Surface Mount
Package / Case SOT-723
Surface Mount YES
Number of Pins 3Pins
Collector-Emitter Breakdown Voltage 25V
Collector-Emitter Saturation Voltage 500mV
Number of Elements 1 Element
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2009
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Power Dissipation 640mW
Terminal Position DUAL
Terminal Form FLAT
Frequency 650MHz
Base Part Number MMBTH10
Pin Count 3
Element Configuration Single
Power Dissipation 640mW
Power - Max 265mW
Gain Bandwidth Product 650MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 25V
Max Collector Current 4mA
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 4mA 10V
Transition Frequency 650MHz
Collector Base Voltage (VCBO) 30V
Emitter Base Voltage (VEBO) 3V
Height 550μm
Length 1.25mm
Width 850μm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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MMBTH10M3T5G Documents

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