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MMBZ33VALT1G Tech Specifications

Category TVS - Diodes
Manufacturer ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Factory Lead Time 4 Weeks
Contact Plating Tin
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface Mount YES
Number of Pins 3Pins
Diode Element Material SILICON
Breakdown Voltage / V 31.35V
Number of Elements 2 Elements
Reverse Stand-off Voltage 26V
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2007
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Termination SMD/SMT
ECCN Code EAR99
Type Zener
Applications General Purpose
HTS Code 8541.10.00.50
Power Rating 40W
Voltage - Rated DC 33V
Max Power Dissipation 40W
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Depth 1.3mm
Current Rating 1A
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number MMBZ*A
Pin Count 3
Operating Supply Voltage 26V
Working Voltage 26V
Leakage Current 50nA
Element Configuration Common Anode
Power Dissipation 40W
Power Line Protection No
Max Reverse Leakage Current 50μA
Voltage - Clamping (Max) @ Ipp 46V
Clamping Voltage 46V
Peak Pulse Current 870mA
Max Surge Current 870mA
Peak Pulse Power 40W
Direction Unidirectional
Test Current 1mA
Unidirectional Channels 2
Reverse Breakdown Voltage 31.35V
Max Breakdown Voltage 34.65V
ESD Protection Yes
Height 1.01mm
Length 2.9mm
Width 1.4mm
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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MMBZ33VALT1G Documents

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