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MMDF2N02ER2 Tech Specifications
| Category | Transistors - FETs, MOSFETs - Arrays | |
| Manufacturer | ON Semiconductor | |
| Lifecycle Status | OBSOLETE (Last Updated: 2 weeks ago) | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) | |
| Number of Pins | 8Pins | |
| Transistor Element Material | SILICON | |
| Number of Elements | 2 Elements | |
| Turn Off Delay Time | 27 ns | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Published | 2006 | |
| JESD-609 Code | e0 | |
| Pbfree Code | no | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 8Terminations | |
| ECCN Code | EAR99 | |
| Additional Feature | LOGIC LEVEL COMPATIBLE | |
| Voltage - Rated DC | 25V | |
| Max Power Dissipation | 2W | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | 240 | |
| Reach Compliance Code | not_compliant |
| Current Rating | 2A | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Pin Count | 8 | |
| Qualification Status | Not Qualified | |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
| Operating Mode | ENHANCEMENT MODE | |
| Power Dissipation | 2W | |
| FET Type | 2 N-Channel (Dual) | |
| Transistor Application | SWITCHING | |
| Rds On (Max) @ Id, Vgs | 100m Ω @ 2.2A, 10V | |
| Vgs(th) (Max) @ Id | 3V @ 250μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 532pF @ 16V | |
| Gate Charge (Qg) (Max) @ Vgs | 30nC @ 10V | |
| Rise Time | 17ns | |
| Fall Time (Typ) | 18 ns | |
| Continuous Drain Current (ID) | 3.6A | |
| Gate to Source Voltage (Vgs) | 20V | |
| Drain-source On Resistance-Max | 0.1Ohm | |
| Drain to Source Breakdown Voltage | 25V | |
| Avalanche Energy Rating (Eas) | 245 mJ | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| FET Feature | Logic Level Gate | |
| RoHS Status | Non-RoHS Compliant | |
| Lead Free | Contains Lead |
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MMDF2N02ER2 Documents
Download datasheets and manufacturer documentation for MMDF2N02ER2
- PCN Obsolescence/ EOLMultiple Devices 03/Jan/2008
- ReachStatementON-Semiconductor-company-79.pdf
- DatasheetsMMDF2N02E
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