- All Products
- /
- Discrete Semiconductor Products
- /
- Transistors - Bipolar (BJT) - Single, Pre-Biased
- /
- MMUN2113LT1G
IN STOCK
: 69880
Min. : 1
Mult. : 1

Not available to buy on line? Want the lower wholesale price? Please sendRFQ, we will respond immediately
MMUN2113LT1G Tech Specifications
| Category | Transistors - Bipolar (BJT) - Single, Pre-Biased | |
| Manufacturer | ON Semiconductor | |
| Lifecycle Status | ACTIVE (Last Updated: 1 day ago) | |
| Factory Lead Time | 4 Weeks | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-236-3, SC-59, SOT-23-3 | |
| Surface Mount | YES | |
| Number of Pins | 3Pins | |
| Collector-Emitter Breakdown Voltage | 50V | |
| Collector-Emitter Saturation Voltage | 250mV | |
| Number of Elements | 1 Element | |
| hFEMin | 80 | |
| Packaging | Tape & Reel (TR) | |
| Published | 2001 | |
| JESD-609 Code | e3 | |
| Pbfree Code | yes | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 3Terminations | |
| ECCN Code | EAR99 | |
| Terminal Finish | Tin (Sn) | |
| Max Operating Temperature | 150°C | |
| Min Operating Temperature | -55°C | |
| Additional Feature | BUILT-IN BIAS RESISTOR RATIO 1 | |
| HTS Code | 8541.21.00.95 | |
| Voltage - Rated DC | -50V | |
| Max Power Dissipation | 246mW | |
| Terminal Position | DUAL | |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 | |
| Current Rating | -100mA | |
| Time@Peak Reflow Temperature-Max (s) | 40 | |
| Base Part Number | MMUN21**L | |
| Pin Count | 3 | |
| Max Output Current | 100mA | |
| Operating Supply Voltage | 50V | |
| Polarity | PNP | |
| Element Configuration | Single | |
| Power Dissipation | 246mW | |
| Transistor Application | SWITCHING | |
| Halogen Free | Halogen Free | |
| Transistor Type | PNP - Pre-Biased | |
| Collector Emitter Voltage (VCEO) | 50V | |
| Max Collector Current | 100mA | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA 10V | |
| Current - Collector Cutoff (Max) | 500nA | |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300μA, 10mA | |
| Max Breakdown Voltage | 50V | |
| Resistor - Base (R1) | 47 k Ω | |
| Continuous Collector Current | 100mA | |
| Resistor - Emitter Base (R2) | 47 k Ω | |
| Height | 940μm | |
| Length | 2.9mm | |
| Width | 1.3mm | |
| REACH SVHC | No SVHC | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |
Select at least one checkbox above to show similar products in this category.
MMUN2113LT1G Documents
Download datasheets and manufacturer documentation for MMUN2113LT1G
- PCN Design/SpecificationGlue Mount Process 11/July/2008 SOT23 16/Sep/2016
- DatasheetsMMUN2113LT1G-ON-Semiconductor-datasheet-11737016.pdf MUNx113, MMUN2113L, DTA144Exx, NSBA144EF3 MMUN2113LT1G-ON-Semiconductor-datasheet-78758644.pdf MMUN2113LT1G-ON-Semiconductor-datasheet-15540252.pdf MMUN2113LT1G-ON-Semiconductor-datasheet-33006791.pdf MMUN2113LT1G-ON-Semiconductor-datasheet-37521463.pdf MMUN2113LT1G-ON-Semiconductor-datasheet-58910.pdf MMUN2113LT1G-ON-Semiconductor-datasheet-15206846.pdf
- PCN Assembly/OriginMold Compound 08/Sep/2019
- Environmental InformationMaterial Declaration MMUN2113LT1G
- RohsStatementON-Semiconductor-MMUN2113LT1G.pdf
Index :
0123456789ABCDEFGHIJKLMNOPQRSTUVWXYZ
