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MUN5333DW1T1G Tech Specifications

Category Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Manufacturer ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Factory Lead Time 8 Weeks
Contact Plating Tin
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Surface Mount YES
Number of Pins 6Pins
Collector-Emitter Breakdown Voltage 50V
Number of Elements 2 Elements
hFEMin 80
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6Terminations
ECCN Code EAR99
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Additional Feature BUILT-IN BIAS RESISTOR RATIO 10
Voltage - Rated DC 50V
Max Power Dissipation 250mW
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 100mA
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number MUN53**DW1
Pin Count 6
Max Output Current 100mA
Operating Supply Voltage 50V
Polarity NPN, PNP
Element Configuration Dual
Power Dissipation 187mW
Transistor Application SWITCHING
Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual)
Collector Emitter Voltage (VCEO) 50V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA 10V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 250mV @ 1mA, 10mA
Max Breakdown Voltage 50V
Resistor - Base (R1) 4.7k Ω
Continuous Collector Current 100mA
Resistor - Emitter Base (R2) 47k Ω
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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