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NTHD4508NT1G Tech Specifications

Category Transistors - FETs, MOSFETs - Arrays
Manufacturer ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 11 hours ago)
Factory Lead Time 6 Weeks
Mounting Type Surface Mount
Package / Case 8-SMD, Flat Lead
Surface Mount YES
Number of Pins 8Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 3A
Number of Elements 2 Elements
Turn Off Delay Time 10 ns
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2004
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Voltage - Rated DC 20V
Max Power Dissipation 2.1W
Terminal Form C BEND
Peak Reflow Temperature (Cel) 260
Current Rating 3.1A
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number NTHD4508N
Pin Count 8
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.13W
Turn On Delay Time 5 ns
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 75m Ω @ 3.1A, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 180pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 4nC @ 4.5V
Rise Time 15ns
Fall Time (Typ) 15 ns
Continuous Drain Current (ID) 4.1A
Threshold Voltage 1.2V
Gate to Source Voltage (Vgs) 12V
Drain-source On Resistance-Max 0.075Ohm
Drain to Source Breakdown Voltage 20V
Pulsed Drain Current-Max (IDM) 10A
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Height 1.1mm
Length 3.1mm
Width 1.7mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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